4-channel low capacitance esd protection diodes array descriptions the sesd 099-04bt1 is a 4-channel ultra low capacitance rail protection diodes array. each channel consists of diodes that steer positive or n egative esd current positive or negative rail. a zener di ode is integrated between the positive and negative supply rails. in the typical applications, the negative rail pin (assigned as gnd) is connected with system ground. the positive esd current is steered to the ground through an esd diode and zener diode and the positive esd voltage is cl amped to the zener voltage. the sesd 099-04bt1 is idea to protect high speed data lines. package type is provided for easy pcb layout. descriptions * 4 channels of esd protection; * hdmi / dvi ports; * provides esd protection to iec61000-4-2 level 4 * display port interface; - 15kv air discharge * 10m / 100m / 1g ethernet; - 8kv contact discharge; * usb 2.0 interface; * channel i/o to gnd c apacitance: 0.9pf(max) * vga interface * channel i/o to i/o capac itance: 0.45pf(max) * set-top box; * low clamping voltage; * flat panel monitors / tvs; * pc / note book * low operating voltage; * improved zener structure; * optimized package for easy high speed data lines pcb layout; * rohs compliant. features applications ordering information part no. package marking material shipping sesd 099-04bt1 sot-363 c96 haloge n 3000tape&reel in to the array to either the a pair of esd clamp esd three 1 2 3 4 5 6 sot-363 willas electronic corp. 2012-09 SESD099-04BT1 *
pin configuration s ot - 363 absolute maximum ratings characteristics symbol ratings unit peak pulse power(8/20 s) p 150 w pp peak pulse current(8/20 s) i 5 a pp esd per iec 61000-4-2(air) v 15kv kv esd1 esd per iec 61000-4-2(contact) v 8kv kv esd2 operating temperature range t opr -55 ~ +125 c storage temperature range t stg -55 ~ +150 c electrical characteristics (t amb =25 c) characteristics symbol test conditions min. typ. max. unit reverse working voltage any i/o pin to gnd 5 v v rwm reverse breakdown voltage t =1ma; v 6 v br any i/o pin to gnd reverse leakage current v =5v, t=25 c; rwm i 1 a r any i/o pin to gnd i positive clamping voltage v c1 pp =1a, t =8/20 s; p positive pulse; 8.5 12.0 v any i/o pin to gnd i negative clamping voltage v c2 pp =1a, t =8/20 s; p negative pulse; 1.8 v any i/o pin to gnd junction capacitance between channel v r =0v, f=1mhz; c 0.35 0.45 pf j1 between i/o pins junction capacitance between i/o and gnd v r =0v, f=1mhz; c 0.9 pf j2 any i/o pin to gnd 4-channel low capacitance esd protection diodes array SESD099-04BT1 willas electronic corp. 2012-09
typical electrical ch aracteristics curve 4-channel low capacitance esd protection diodes array SESD099-04BT1 willas electronic corp. 2012-09
typical electrical ch aracteristics curve 4-channel low capacitance esd protection diodes array SESD099-04BT1 willas electronic corp. 2012-09
0.5 mm (min) 0.4 mm (min) 0.65 mm 0.65 mm 1.9 mm sot - 363 4-channel low capacitance esd protection diodes array SESD099-04BT1 willas electronic corp. 2012-09 dimensions in inches and (millimeters) .056(1.40) .047(1.20) .071(1.80) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .004(0.10) .004(0.10)max. .087(2.20) .071(1.80) .054(1.35) .045(1.15) .021(0.55) .030(0.75) .096(2.45)
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